SKKT330/14E-SEMIKRON Intelligent Power Module this device integrates insulated gate

this device integrates insulated gate bipolar transistor technology with a robust package suitable for hard-switching and soft-switching converter topologies

With a current factory lead time of 36 weeks on new production

1200V IGBT module engineered for high-power switching applications where thermal performance

rated for 50A continuous forward current and 550V repetitive peak reverse voltage

SKKT330/14E-SEMIKRON Intelligent Power Module this device integrates insulated gateThe SKKT330 14E is a high current, high voltage dual thyristor (SCR) module from SEMIKRON, rated at 330A average on state current and 1400V repetitive peak off state voltage (VDRM VRRM). Housed in the industry standard SKKT package, this module integrates two thyristors in a common cathode or common anode configuration, enabling compact circuit designs for phase controlled rectifiers and AC power regulators. Its isolated baseplate construction